Abstract

An electro-optic random-access memory enables (1) ultra-fast write and read operation (2) featuring differential sensing (3) wavelength, and polarization multiplex high bandwidth memory access (4) enables very large-scale memory array for wafer scale ICs.

Metadata

publication

US Patent App. 18/281,662, 2024

year

2024

publication date

2024/5/23

authors

AP Jacob, AR Jaiswal, R Kudalippalliyalil, S Chandran

link

https://patents.google.com/patent/US20240170055A1/en

inventors

Ajey Poovannummoottil Jacob, Akhilesh Ramlaut Jaiswal, Ramesh Kudalippalliyalil, Sujith Chandran

patent_office

US

application_number

18281662