Publications
Sensing scheme for STT-MRAM using low-barrier nanomagnets
Abstract
G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- Date
- October 3, 2023
- Authors
- A Agrawal, AP Jacob, BC Paul
- Inventors
- Amogh Agrawal, Ajey Poovannummoottil Jacob, Bipul C Paul
- Patent_office
- US
- Patent_number
- 11776606
- Application_number
- 17365481