Publications

Sensing scheme for STT-MRAM using low-barrier nanomagnets

Abstract

G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Date
October 3, 2023
Authors
A Agrawal, AP Jacob, BC Paul
Inventors
Amogh Agrawal, Ajey Poovannummoottil Jacob, Bipul C Paul
Patent_office
US
Patent_number
11776606
Application_number
17365481