Abstract

One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plural ity of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

Metadata

publication

US Patent 11,374,143, 2022

year

2022

publication date

2022/6/28

authors

AP Jacob, Y Bian, S Shank

link

https://patents.google.com/patent/US11374143B2/en

resource_link

https://patentimages.storage.googleapis.com/5f/3e/56/cb37fff000e6c6/US11374143.pdf

inventors

Ajey Poovannummoottil Jacob, Yusheng Bian, Steven Shank

patent_office

US

patent_number

11374143

application_number

16740664