Abstract

A photodetector disclosed herein includes an N-doped wave guide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure posi tioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor mate rial of the detector structure.

Metadata

publication

US Patent 11,177,404, 2021

year

2021

publication date

2021/11/16

authors

AP Jacob, Y Bian, S Shank

link

https://patents.google.com/patent/US11177404B2/en

resource_link

https://patentimages.storage.googleapis.com/1d/51/8b/ce85dfebcef647/US11177404.pdf

inventors

Ajey Poovannummoottil Jacob, Yusheng Bian, Steven Shank

patent_office

US

patent_number

11177404

application_number

16740719