Publications
Resistive nonvolatile memory cells with shared access transistors
Abstract
A device is disclosed including a first resistive storage element, a first access transistor having a first terminal coupled to the first resistive storage element at a first node, a second resistive storage element, a second access transistor having a first terminal coupled to the second resistive storage element at a second node, and a write assist tran sistor having a first terminal coupled to the first node and a second terminal coupled to the second node.
Metadata
- publication
- US Patent 10,665,281, 2020
- year
- 2020
- publication date
- 2020/5/26
- authors
- AP Jacob, A Agrawal, BC Paul
- link
- https://patents.google.com/patent/US10665281B1/en
- resource_link
- https://patentimages.storage.googleapis.com/6c/62/b2/8f8fd9c32f8bfd/US10665281.pdf
- inventors
- Ajey Poovannummoottil Jacob, Amogh Agrawal, Bipul C Paul
- patent_office
- US
- patent_number
- 10665281
- application_number
- 16286942