Abstract

In an aspect of the disclosure, a grating coupler structure comprises: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material. In an aspect of the disclosure, a grating coupler structure comprises: a semiconductor material; a polysilicon material embedded in dielectric material over the semiconductor material and having a first grating coupler pattern; a SiN material embedded in the dielectric material and located over the polysilicon material, the SiN material having a second grating coupler pattern which directs light through the first gating coupler pattern of the polysilicon material; and a back end of line (BEOL) multilayer stack over the dielectric material.
In an aspect of the disclosure, a method comprises: forming a …

Metadata

publication

US Patent 10,585,219, 2020

year

2020

publication date

2020/3/10

authors

AP Jacob, Y Bian

link

https://patents.google.com/patent/US10585219B2/en

resource_link

https://patentimages.storage.googleapis.com/ba/86/cf/aa258937eb3c03/US10585219.pdf

inventors

Ajey Poovannummoottil Jacob, Yusheng Bian

patent_office

US

patent_number

10585219

application_number

16000249