Publications

Logic-in-memory computations for non-volatile resistive random access memory (RAM) array

Abstract

The present disclosure relates to a structure including a memory array circuit with a magnetic tunnel junction array and an inverter between at least two data magnetic tunnel junctions and configured to enable logic-in-memory com putations.(58)

Date
November 5, 2019
Authors
AR Jaiswal, AP Jacob
Inventors
Akhilesh R Jaiswal, Ajey Poovannummoottil Jacob
Patent_office
US
Patent_number
10468084
Application_number
15944032