Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs for light emit ting diode displays and methods of manufacture. The method includes: forming replacement fin structures with a doped core region, on doped substrate material; forming quantum wells over the replacement fin structures; forming a first color emitting region by doping at least one of the quantum wells over at least a first replacement fin structure of the replacement fin structures, while protecting at least a second replacement fin structure of the replacement fin structures, and forming a second color emitting region by doping another one of the quantum wells over the at least second replacement fin structure of the replacement fin structures, while protecting the first replacement fin struc ture and other replacement fin structures which are not to be doped.

Metadata

publication

US Patent 10,396,121, 2019

year

2019

publication date

2019/8/27

authors

AP Jacob, S Banna, D Nayak

link

https://patents.google.com/patent/US10396121B2/en

resource_link

https://patentimages.storage.googleapis.com/bf/10/59/c0b07fb2b638ea/US10396121.pdf

inventors

Ajey P Jacob, Srinivasa Banna, Deepak Nayak

patent_office

US

patent_number

10396121

application_number

15680948