Publications
Methods of forming a vertical transistor device with a channel structure comprised of alternative semiconductor materials
Abstract
One illustrative method disclosed herein includes, among other things, forming a sacrificial mandrel structure above a semiconductor substrate comprising a first semiconductor material and forming a plurality of vertically-oriented chan nel semiconductor (VOCS) structures on at least opposing lateral sidewall surfaces of the sacrificial mandrel structure, the VOCS structures comprising a second semiconductor material that is different than the first semiconductor mate rial. In this example, the method also includes selectively removing the sacrificial mandrel structure relative to the VOCS structures and forming upper and lower source/drain regions in each of the VOCS structures and a gate structure around each of the VOCS structures.
Metadata
- publication
- US Patent 10,090,385, 2018
- year
- 2018
- publication date
- 2018/10/2
- authors
- AP Jacob
- link
- https://patents.google.com/patent/US10090385B1/en
- resource_link
- https://patentimages.storage.googleapis.com/1a/0c/96/d3c56a156365e1/US10090385.pdf
- inventors
- Ajey Poovannummoottil Jacob
- patent_office
- US
- patent_number
- 10090385
- application_number
- 15475946