Abstract

A device includes an NMOS FinFET device including a first fin. The first fin includes a first strain relaxed buffer layer doped with carbon and a first channel semiconductor mate rial formed above the carbon-doped strain relaxed buffer layer. A PMOS FinFET device includes a second fin. The second fin includes a second strain relaxed buffer layer and a second channel semiconductor material formed above the carbon-doped strain relaxed buffer layer. A first gate struc ture is positioned around a portion of the NMOS fin. A second gate structure is positioned around a portion of the PMOS fin.

Metadata

publication

US Patent 10,056,300, 2018

year

2018

publication date

2018/8/21

authors

AP Jacob

link

https://patents.google.com/patent/US10056300B2/en

resource_link

https://patentimages.storage.googleapis.com/4c/ba/08/316997aab1124b/US10056300.pdf

inventors

Ajey Poovannummoottil Jacob

patent_office

US

patent_number

10056300

application_number

15729051