Publications
Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices
Abstract
(54) METHODS OF FORMING FIN ISOLATION REGIONS UNDER TENSILE-STRAINED FINS ON FINFET SEMICONDUCTOR DEVICES
Metadata
- publication
- US Patent 10,026,659, 2018
- year
- 2018
- publication date
- 2018/7/17
- authors
- AP Jacob, MK Akarvardar, JA Fronheiser
- link
- https://patents.google.com/patent/US10026659B2/en
- resource_link
- https://patentimages.storage.googleapis.com/e3/bc/04/e6437a1b5d0276/US10026659.pdf
- inventors
- Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A Fronheiser
- patent_office
- US
- patent_number
- 10026659
- application_number
- 14608815