Publications
Method for forming nanowires including multiple integrated devices with alternate channel materials
Abstract
Methods for forming a NW with multiple devices having alternate channel materials and resulting devices are dis closed. Embodiments include forming a first stack of semi conductor layers including a first doped Si layer, a first channel layer, and a second doped Si layer, respectively, on a Si substrate; forming a second stack including a first doped
Metadata
- publication
- US Patent 9,953,882, 2018
- year
- 2018
- publication date
- 2018/4/24
- authors
- AP Jacob
- link
- https://patents.google.com/patent/US9953882B2/en
- resource_link
- https://patentimages.storage.googleapis.com/b4/32/12/1fde61e79c367f/US9953882.pdf
- inventors
- Ajey P Jacob
- patent_office
- US
- patent_number
- 9953882
- application_number
- 15792281