Abstract

A method of preventing corner rounding for an alternate channel FINFET formed in trenches and the resulting devices are provided. Embodiments include providing a Si substrate; forming a trench in the Si substrate; forming a Si based layer with a flat upper surface in the trench; and forming a SiGe layer over the Si based layer.

Date

January 4, 2018

Authors

AP Jacob, J Fronheiser, B Doris, H Bu

Inventors

Ajey P Jacob, Jody Fronheiser, Bruce Doris, Huiming Bu

Patent_office

US

Application_number

15198570