Publications

Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices

Abstract

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, eg a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Date
April 4, 2017
Authors
J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
Inventors
Jody Fronheiser, Ajey P Jacob, Witold P Maszara, Kerem Akarvardar
Patent_office
US
Patent_number
9614058
Application_number
14860276