Publications
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices
Abstract
H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, eg a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- Date
- April 4, 2017
- Authors
- J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
- Inventors
- Jody Fronheiser, Ajey P Jacob, Witold P Maszara, Kerem Akarvardar
- Patent_office
- US
- Patent_number
- 9614058
- Application_number
- 14860276