Publications
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices
Abstract
H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, eg a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
Metadata
- publication
- US Patent 9,614,058, 2017
- year
- 2017
- publication date
- 2017/4/4
- authors
- J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
- link
- https://patents.google.com/patent/US9614058B2/en
- resource_link
- https://patentimages.storage.googleapis.com/e0/19/39/3ccf13378265c5/US9614058.pdf
- inventors
- Jody Fronheiser, Ajey P Jacob, Witold P Maszara, Kerem Akarvardar
- patent_office
- US
- patent_number
- 9614058
- application_number
- 14860276