Abstract

(57) ABSTRACT A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor Substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isola tion region Such that the first and second isolation regions are in direct contact and a height above the bulk semicon ductor Substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region.

Metadata

publication

US Patent 9,564,486, 2017

year

2017

publication date

2017/2/7

authors

MK Akarvardar, SJ Bentley, K Cheng, BB Doris, J Fronheiser, AP Jacob, ...

link

https://patents.google.com/patent/US9564486B2/en

resource_link

https://patentimages.storage.googleapis.com/ca/90/a3/1c2e8cc0730846/US9564486.pdf

inventors

Murat Kerem Akarvardar, Steven John Bentley, Kangguo Cheng, Bruce B Doris, Jody Fronheiser, Ajey Poovannummoottil Jacob, Ali Khakifirooz, Toshiharu Nagumo

patent_office

US

patent_number

9564486

application_number

14839378