Abstract

(57) ABSTRACT A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor Substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isolation region Such that the first and second isolation regions are in direct contact and a height above the bulk semiconductor Substrate of the second isolation region is greater thana height above the bulk semiconductor substrate of the first isolation region.

Metadata

publication

US Patent 9,324,790, 2016

year

2016

publication date

2016/4/26

authors

MK Akarvardar, SJ Bentley, K Cheng, BB Doris, J Fronheiser, AP Jacob, ...

link

https://patents.google.com/patent/US9324790B2/en

resource_link

https://patentimages.storage.googleapis.com/9b/39/ce/4413a56ce286eb/US9324790.pdf

inventors

Murat Kerem Akarvardar, Steven John Bentley, Kangguo Cheng, Bruce B Doris, Jody Fronheiser, Ajey Poovannummoottil Jacob, Ali Khakifirooz, Toshiharu Nagumo

patent_office

US

patent_number

9324790

application_number

14083571