Abstract

One method disclosed herein includes forming a sacrificial gate structure comprised of upper and lower sacrificial gate electrodes, performing at least one etching process to define a patterned upper sacrificial gate electrode comprised of a plu rality of trenches that expose a portion of a surface of the lower sacrificial gate electrode and performing another etch ing process through the patterned upper sacrificial gate elec trode to remove the lower sacrificial gate electrode and a sacrificial gate insulation layer and thereby define a first por tion of a replacement gate cavity that is at least partially positioned under the patterned upper sacrificial gate elec trode.

Metadata

publication

US Patent 9,236,258, 2016

year

2016

publication date

2016/1/12

authors

R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove

link

https://patents.google.com/patent/US9236258B2/en

resource_link

https://patentimages.storage.googleapis.com/03/58/05/5968016d2e1b66/US9236258.pdf

inventors

Ruilong Xie, Xiuyu Cai, Andy C Wei, Qi Zhang, Ajey Poovannummoottil Jacob, Michael Hargrove

patent_office

US

patent_number

9236258

application_number

14259694