Abstract

METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMCONDUCTOR DEVICE AND THE RESULTING DEVICE

Date

December 15, 2015

Authors

X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz

Inventors

Xiuyu Cai, Ruilong Xie, Ajey P Jacob, Witold P Maszara, Kangguo Cheng, Ali Khakifirooz

Patent_office

US

Patent_number

9214553

Application_number

14200952