Abstract

METHODS OF FORMING STRESSED CHANNEL REGIONS FOR A FINFET SEMCONDUCTOR DEVICE AND THE RESULTING DEVICE

Metadata

publication

US Patent 9,214,553, 2015

year

2015

publication date

2015/12/15

authors

X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz

link

https://patents.google.com/patent/US9214553B2/en

resource_link

https://patentimages.storage.googleapis.com/11/63/2f/f99f75b0b51d62/US9214553.pdf

inventors

Xiuyu Cai, Ruilong Xie, Ajey P Jacob, Witold P Maszara, Kangguo Cheng, Ali Khakifirooz

patent_office

US

patent_number

9214553

application_number

14200952