Abstract

Embodiments herein provide device isolation in a compli mentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of high mobility channel fins is formed over the retrograde doped layer, each of the set of high mobility chan nel fins comprising a high mobility channel material (eg, silicon or silicon-germanium). The retrograde doped layer may be formed using an in situ doping process or a counter dopant retrograde implant. The device may further include a carbon liner positioned between the retrograde doped layer and the set of high mobility channel fins to prevent carrier spill-out to the high mobility channel fins.

Date

November 17, 2015

Authors

AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...

Inventors

Ajey Poovannummoottil Jacob, Steven John Bentley, Murat Kerem Akarvardar, Jody Alan Fronheiser, Kangguo Cheng, Bruce B Doris, Ali Khakifirooz, Toshiharu Nagumo

Patent_office

US

Patent_number

9190411

Application_number

13914808