Abstract

(*) Notice: Subject to any disclaimer, the term of this* cited b patent is extended or adjusted under 35 cited by examiner USC 154 (b) by 4 days. Primary Examiner—Caridad Everhart (74) Attorney, Agent, or Firm—Amerson Law Firm, PLLC (21) Appl. No.: 14/143,468(57) ABSTRACT (22) Filed: Dec. 30, 2013 One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrifi (65) Prior Publication Data cial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the side US 2015/O1879. 05 A1 Jul. 2, 2015 wall spacers, removing the sacrificial gate structure to define (51) Int. Cl a replacement gate cavity positioned between the sidewall iotL 2I/3205(2006.01) spacers, forming a replacement gate structure in the replace HOIL 29/66(2006.015 ment gate cavity, forming a tensile-stressed gate cap layer HOIL 2L/305(200 …

Date

November 10, 2015

Authors

X Cai, AP Jacob, DT Pham, MV Raymond, CM Prindle, CB Labelle, ...

Inventors

Xiuyu Cai, Ajey Poovannummoottil Jacob, Daniel T Pham, Mark V Raymond, Christopher M Prindle, Catherine B Labelle, Linus Jang, Robert Teagle

Patent_office

US

Patent_number

9184263

Application_number

14143468