Publications
Replacement fin insolation in a semiconductor device
Abstract
(21) Appl. No.: 14/195.884 device is formed having a set of replacement fins over a Substrate, each of the set of replacement fins comprising a first (22) Filed: Mar. 4, 2014 section separated from a second section by a liner layer, the first section having a lower dopant centration than a dopant Publication Classification concentration of the second section. In one embodiment, sequential epitaxial deposition with insitu doping is used to (51) Int. Cl. form the second section, the liner layer, and then the first HOIL 27/088(2006.01) section of each of the set of replacement fins. In another HOIL 29/6(2006.01) embodiment, the second section is formed over the substrate, HOIL 2L/266(2006.01) and the liner layer is formed through a carbon implant. The HOIL 2/8234(2006.01) first section is then epitaxially formed over the liner layer, and HOIL 2L/265(2006.01) serves as the fin channel. As provided, upward dopant diffu HOIL 21 …
Metadata
- publication
- US Patent App. 14/195,884, 2015
- year
- 2015
- publication date
- 2015/9/10
- authors
- AP Jacob, MH Chi
- link
- https://patents.google.com/patent/US20150255456A1/en
- resource_link
- https://patentimages.storage.googleapis.com/79/1e/53/b833dae614002d/US20150255456A1.pdf
- inventors
- Ajey Poovannummoottil Jacob, Min-Hwa Chi
- patent_office
- US
- application_number
- 14195884