Abstract

2. Background Information Fin Field-Effect Transistors (FinFET) devices are cur rently being developed to replace conventional planar metal oxide semiconductor field-effect transistors (MOSFETs) in advanced complementary metal oxide semiconductor (CMOS) technology due to their improved short-channel effect immunity and higher on-current to off-current ratio

Metadata

publication

US Patent 9,076,842, 2015

year

2015

publication date

2015/7/7

authors

AP Jacob, MK Akarvardar, SJ Bentley, BJ Pawlak

link

https://patents.google.com/patent/US9076842B2/en

resource_link

https://patentimages.storage.googleapis.com/22/61/96/09bea95401b951/US9076842.pdf

inventors

Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven John Bentley, Bartlomiej Jan Pawlak

patent_office

US

patent_number

9076842

application_number

14011125