Abstract

Group III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well …

Metadata

publication

MRS Online Proceedings Library (OPL) 1790, 13-18, 2015

year

2015

publication date

2015/1

authors

Shun Sasaki, Shailesh Madisetti, Vadim Tokranov, Michael Yakimov, Makoto Hirayama, Steven Bentley, Rohit Galatage, Ajey P Jacob, Serge Oktyabrsky

link

https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/group-iiisb-metamorphic-buffer-on-si-for-pchannel-alliiiv-cmos-electrical-properties-growth-and-surface-defects/B3463BF15F53F881A10409C553244F03

resource_link

https://www.researchgate.net/profile/Ajey-Jacob/publication/277921823_Group_III-Sb_Metamorphic_Buffer_on_Si_for_p-Channel_all-III-V_CMOS_Electrical_Properties_Growth_and_Surface_Defects/links/5e5aaa3fa6fdccbeba0f1a95/Group-III-Sb-Metamorphic-Buffer-on-Si-for-p-Channel-all-III-V-CMOS-Electrical-Properties-Growth-and-Surface-Defects.pdf

journal

MRS Online Proceedings Library (OPL)

volume

1790

pages

13-18

publisher

Cambridge University Press