Abstract

One illustrative device disclosed herein includes a substrate fin formed in a Substrate comprised of a first semiconductor material, wherein at least a sidewall of the substrate fin is positioned substantially in a< 100> crystallographic direction of the crystalline structure of the substrate, a replacement fin structure positioned above the substrate fin, wherein the replacement fin structure is comprised of a semiconductor material that is different from the first semiconductor mate rial, and agate structure positioned around at least a portion of the replacement fin structure.

Date

September 18, 2014

Authors

J Fronheiser, AP Jacob, WP Maszara, K Akarvardar

Inventors

Jody Fronheiser, Ajey P Jacob, Witold P Maszara, Kerem Akarvardar

Patent_office

US

Application_number

13839998