Abstract

Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today’s microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal–oxide–semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn0.05Ge0.95 quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration …

Metadata

publication

Nature Materials 9 (4), 337-344, 2010

year

2010

publication date

2010/4

authors

Faxian Xiu, Yong Wang, Jiyoung Kim, Augustin Hong, Jianshi Tang, Ajey P Jacob, Jin Zou, Kang L Wang

link

https://www.nature.com/articles/nmat2716

resource_link

https://www.academia.edu/download/88497979/Electric_20field_20controlled_20FM_20nmat2716_202010.pdf

journal

Nature Materials

volume

9

issue

4

pages

337-344

publisher

Nature Publishing Group UK