Abstract

We present results on directly modulated lasers with high‐reflectivity coating, mode‐locked lasers with a gain and absorber section, and semiconductor optical amplifiers (SOA) with anti‐reflection coating, all based on InGaAs/GaAs quantum dot (QD) material emitting at 1.3 µm. Error free 8 and 10 Gb/s data modulation is presented. 80 GHz passive mode‐locking of two‐section QD lasers is reported. Hybrid mode‐locking was achieved at 40 GHz. The minimum pulse width at 80 GHz was 1.5 ps, with a time‐bandwidth product of 1.7. QD SOAs are shown to have a chip gain larger than 26 dB. Modeling of the gain characteristics of these devices predicts 40 dB amplification under ideal biasing and input power. QD‐VCSEL with 17 p‐modulation doped QD layers placed in 5 field intensity antinodes and fully doped GaAs/AlGaAs DBRs show a peak multimode RT cw output power of 1.8 mW and differential efficiency of …

Metadata

publication

physica status solidi c 3 (3), 391-394, 2006

year

2006

publication date

2006/3

authors

M Laemmlin, G Fiol, M Kuntz, F Hopfer, A Mutig, NN Ledentsov, AR Kovsh, C Schubert, A Jacob, A Umbach, D Bimberg

link

https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200564142

resource_link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200564142

journal

physica status solidi c

volume

3

issue

3

pages

391-394

publisher

WILEY‐VCH Verlag