Abstract

We have used the strain sensitive tool two-dimensional reciprocal space mapping (2D-RSM) and high resolution rocking curves (HR-RC) to assess the effect of the layer thickness and the influence of low temperature Si buffer on the properties of fully relaxed Ge on Si (0 0 1). The samples were grown by chemical vapor deposition in an ASM commercial reactor. As complementary measurements we have employed secondary ion mass spectrometry (SIMS) for chemical analysis, cross sectional transmission electron microscopy for quality assessment, and finally atomic force microscopy (AFM) for investigating the surface roughness. The investigated samples have a thickness ranging from 0.25 to 5.0 μm. In addition and for a 5.0 μm thick Ge layer, an initial low temperature Si (LT-Si) template was grown before the Ge epitaxy. The results indicate that high quality fully relaxed Ge layers have been achieved …

Metadata

publication

Journal of Materials Science: Materials in Electronics 15, 411-417, 2004

year

2004

publication date

2004/7

authors

T Myrberg, AP Jacob, O Nur, M Friesel, Magnus Willander, CJ Patel, Y Campidelli, C Hernandez, O Kermarrec, D Bensahel

link

https://link.springer.com/article/10.1023/B:JMSE.0000031594.36498.27

resource_link

https://www.researchgate.net/profile/Caroline-Hernandez-2/publication/226208694_Structural_properties_of_relaxed_Ge_buffer_layers_on_Si_0_0_1_Effect_of_layer_thickness_and_low_temperature_Si_initial_buffer/links/0deec51bacc1939966000000/Structural-properties-of-relaxed-Ge-buffer-layers-on-Si-0-0-1-Effect-of-layer-thickness-and-low-temperature-Si-initial-buffer.pdf

journal

Journal of Materials Science: Materials in Electronics

volume

15

pages

411-417

publisher

Kluwer Academic Publishers