Abstract

Nonradiative centers in InAs dots grown on GaAs substrates are investigated in this study. The emission from InAs dots close to 1.3 μm is monitored under different excitation densities and different excitation energy. The used samples were also treated by hydrogen plasma in order to suppress the nonradiative centers. The purpose of this work is to study how nonradiative centers influence the efficiency of InAs dots emission and whether the nonradiative centers can be reduced. Our results clearly illustrate that there indeed exist nonradiative centers, both at the interface between the InAs dots and surrounding layers and in the GaAs layers, which can be suppressed by H-treatments. A technique to estimate relative amount of nonradiative centers is also discussed.

Metadata

publication

Physics Letters A 315 (1-2), 150-155, 2003

year

2003

publication date

2003/8/18

authors

QX Zhao, AP Jacob, Magnus Willander, SM Wang, YQ Wei, F Ferdos, M Sadeghi, A Larsson, JH Yang

link

https://www.sciencedirect.com/science/article/pii/S0375960103009757

resource_link

https://www.academia.edu/download/45459664/Nonradiative_centers_in_InAs_dots_grown_20160508-28006-1dyy8n7.pdf

journal

Physics Letters A

volume

315

issue

1-2

pages

150-155

publisher

North-Holland