Abstract

Effect of temperature and time of heat treatment on the distribution of ion-implanted nitrogen in poly Si0.65Ge0.35 gate MOS samples was studied. Secondary ion mass spectrometry (SIMS) was used for the qualitative analysis of the nitrogen distribution. Rapid thermal processing was carried out for a temperature range of 950–1070°C for the redistribution of ions. The nitrogen implantation doses were 5×1014cm−2, 2×1015cm−2 and 5×1015cm−2, all with an implantation energy of 50keV. For a uniform distribution of nitrogen in the SiO2 region, an optimal temperature at a well calibrated time must be applied and this depends on the implantation dose. For medium and high concentrations the optimal conditions were 1050°C and 15s, and 1070°C and 15s, respectively. A uniform nitrogen distribution could be obtained throughout the SiO2 film. Prolonged heat treatment can cause degradation of the oxide layer and …

Metadata

publication

Materials Science in Semiconductor Processing 6 (1-3), 37-41, 2003

year

2003

publication date

2003/2/1

authors

AP Jacob, T Myrberg, M Friesel, O Nur, Magnus Willander, U Serincan, RAŞİT Turan

link

https://www.sciencedirect.com/science/article/pii/S1369800103000696

resource_link

https://www.academia.edu/download/44745134/Ultrathin_oxynitridation_process_through20160414-32706-mcr40s.pdf

journal

Materials Science in Semiconductor Processing

volume

6

issue

1-3

pages

37-41

publisher

Pergamon