Abstract

InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.

Metadata

publication

Acta Physica Polonica A 102 (4-5), 567-576, 2002

year

2002

publication date

2002

authors

Magnus Willander, QX Zhao, AP Jacob, SM Wang, YQ Wei

link

https://bibliotekanauki.pl/articles/2035579.pdf

resource_link

https://bibliotekanauki.pl/articles/2035579.pdf

journal

Acta Physica Polonica A

volume

102

issue

4-5

pages

567-576

publisher

Polska Akademia Nauk. Instytut Fizyki PAN