ISI Directory
Ajey Jacob, Ph.D.
Publications
2025
Apparatus and Method for Fluid Analyte Detection Using Ring Resonator Based Spectroscopy
AP Jacob, A Jaiswal, R Kudalippalliyalil, S Chandran
US Patent App. 18/923,395, 2025
Design of Energy-Efficient Cross-coupled Differential Photonic-SRAM (pSRAM) Bitcell for High-Speed On-Chip Photonic Memory and Compute Systems
Md Abdullah-Al Kaiser, Sugeet Sunder, Clynn Mathew, Michal Rakowski, Ajey P Jacob, Akhilesh R Jaiswal
arXiv preprint arXiv:2503.19544, 2025
Predictive performance of photonic sram-based in-memory computing for tensor decomposition
Sasindu Wijeratne, Sugeet Sunder, Md Abdullah-Al Kaiser, Akhilesh Jaiswal, Clynn Mathew, Ajey P Jacob, Viktor Prasanna
arXiv preprint arXiv:2503.18206, 2025
Scalable in-memory compute optical processor
Sugeet Sunder, Md Abdullah-Al Kaiser, Sasindu Wijeratne, Clynn J Mathew, Viktor Prasanna, Akhilesh Jaiswal, Ajey Jacob
Smart Photonic and Optoelectronic Integrated Circuits 2025 13370, 107-113, 2025
2024
Analog optical interconnect for analog sensing and processing
A Jaiswal, AP Jacob, S Chandran, M Abdullah-al Kaiser
US Patent App. 18/824,636, 2024
EMBEDDED ROM-BASED MULTl-BIT, MULTl-KERNEL, MULTl-CHANNEL WEIGHTS IN INDIVIDUAL PIXELS FOR IN-PIXEL COMPUTING
A Jaiswal, AP Jacob, Z Yin
US Patent App. 18/784,578, 2024
Voltage-Controlled Magnetic Tunnel Junction based ADC-less Global Shutter Processing-in-Pixel for Extreme-Edge Intelligence
Md Abdullah-Al Kaiser, Gourav Datta, Jordan Athas, Christian Duffee, Ajey P Jacob, Pedram Khalili Amiri, Peter A Beerel, Akhilesh R Jaiswal
arXiv e-prints, arXiv: 2410.10592, 2024
Method of fabricating least defective non-planar bipolar heterostructure transistors
AP Jacob, RR Kapadia
US Patent App. 18/579,330, 2024
Augmented memory computing: a new pathway for efficient ai computations
AP Jacob, A Jaiswal
US Patent App. 18/571,407, 2024
Backside optical coupler
S Chandran, AP Jacob, A Jaiswal, R Kudalippalliyalil, S Sunder
US Patent App. 18/430,372, 2024
Quantum chip optoelectronic interposer
AP Jacob, AR Jaiswal, R Kudalippalliyalil
US Patent App. 18/684,145, 2024
Peripheral circuits for processing in-pixel
P Beerel, G Datta, AP Jacob, A Jaiswal, Z Yin
US Patent App. 18/545,859, 2024
A 9 Transistor SRAM Featuring Array-level XOR Parallelism with Secure Data Toggling Operation
Zihan Yin, Annewsha Datta, Shwetha Vijayakumar, Ajey Jacob, Akhilesh Jaiswal
Proceedings of the Great Lakes Symposium on VLSI 2024, 277-281, 2024
Electro-optical high bandwidth ultrafast differential ram
AP Jacob, AR Jaiswal, R Kudalippalliyalil, S Chandran
US Patent App. 18/281,662, 2024
Non-volatile electro-optical high-bandwidth ultra-fast large-scale memory architecture
A Jacob, A Jaiswal
US Patent App. 18/030,380, 2024
2023
Design Considerations for 3D Heterogeneous Integration Driven Analog Processing-in-Pixel for Extreme-Edge Intelligence
Zihan Yin, Gourav Datta, Md Abdullah-Al Kaiser, Peter Beerel, Ajey Jacob, Akhilesh Jaiswal
2023 IEEE International Conference on Rebooting Computing (ICRC), 1-5, 2023
Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments
B Peng, AP Jacob, Y Bian
US Patent 11,782,214, 2023
Electro-optic frequency transducer using coupled microdisk resonators
R Kudalippalliyalil, S Chandran, A Jaiswal, AP Jacob
US Patent App. 18/073,321, 2023
Sensing scheme for STT-MRAM using low-barrier nanomagnets
A Agrawal, AP Jacob, BC Paul
US Patent 11,776,606, 2023
IRIS: Integrated retinal functionality in image sensors
Zihan Yin, Md Abdullah-Al Kaiser, Lamine Ousmane Camara, Mark Camarena, Maryam Parsa, Ajey Jacob, Gregory Schwartz, Akhilesh Jaiswal
Frontiers in Neuroscience 17, 1241691, 2023
Open Access Edited by
Bert Offrein, Michael Wynn Hopkins, Leslie Samuel Smith, Md Abdullah-Al Kaiser, MAA Kaiser, G Datta, Z Wang, AP Jacob, PA Beerel, AR Jaiswal
Physical neuromorphic computing and its industrial applications, 148, 2023
Magneto-electric sensor for hardware trojan detection
A Jacob, A Jaiswal
US Patent App. 17/922,542, 2023
Technology-circuit-algorithm tri-design for processing-in-pixel-in-memory (p2m)
Md Abdullah-Al Kaiser, Gourav Datta, Sreetama Sarkar, Souvik Kundu, Zihan Yin, Manas Garg, Ajey P Jacob, Peter A Beerel, Akhilesh R Jaiswal
Proceedings of the Great Lakes Symposium on VLSI 2023, 613-618, 2023
A Context-Switching/Dual-Context ROM Augmented RAM using Standard 8T SRAM
Md Abdullah-Al Kaiser, Edwin Tieu, Ajey P Jacob, Akhilesh R Jaiswal
Proceedings of the Great Lakes Symposium on VLSI 2023, 149-153, 2023
In-sensor & neuromorphic computing are all you need for energy efficient computer vision
Gourav Datta, Zeyu Liu, Md Abdullah-Al Kaiser, Souvik Kundu, Joe Mathai, Zihan Yin, Ajey P Jacob, Akhilesh R Jaiswal, Peter A Beerel
ICASSP 2023-2023 IEEE International Conference on Acoustics, Speech and …, 2023
Backside Optical Coupler: A Novel I/O for Mechanically Stable High Efficiency Fiber Coupling
Sugeet Sunder, Akhilesh Jaiswal, Ajey Jacob
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 727-731, 2023
Neuromorphic-P2M: processing-in-pixel-in-memory paradigm for neuromorphic image sensors
Md Abdullah-Al Kaiser, Gourav Datta, Zixu Wang, Ajey P Jacob, Peter A Beerel, Akhilesh R Jaiswal
Frontiers in Neuroinformatics 17, 1144301, 2023
Trebuchet: Fully homomorphic encryption accelerator for deep computation
David Bruce Cousins, Yuriy Polyakov, Ahmad Al Badawi, Matthew French, Andrew Schmidt, Ajey Jacob, Benedict Reynwar, Kellie Canida, Akhilesh Jaiswal, Clynn Mathew, Homer Gamil, Negar Neda, Deepraj Soni, Michail Maniatakos, Brandon Reagen, Naifeng Zhang, Franz Franchetti, Patrick Brinich, Jeremy Johnson, Patrick Broderick, Mike Franusich, Bo Zhang, Zeming Cheng, Massoud Pedram
arXiv preprint arXiv:2304.05237, 2023
3D integrated laser attach technology on a 300-mm monolithic CMOS silicon photonics platform
Yusheng Bian, Koushik Ramachandran, Zhuo-Jie Wu, Brittany Hedrick, Kevin K Dezfulian, Thomas Houghton, Karen Nummy, Daniel W Fisher, Takako Hirokawa, Keith Donegan, Francis O Afzal, Monica Esopi, Vaishnavi Karra, Won Suk Lee, Massimo Sorbara, Jorge Lubguban, Jae Kyu Cho, Rongtao Cao, Hanyi Ding, Sujith Chandran, Michal Rakowski, Abdelsalam Aboketaf, Subramanian Krishnamurthy, Scott Mills, Bo Peng, Jeff Pepper, Suruj Deka, Wen Feng, Steven Rishton, Marcel Boudreau, Dylan Logan, Ryan Hickey, Prova Christina Gomes, Kyle Murray, Arnab Dewanjee, Dave Riggs, Norman Robson, Ian Melville, Rod Augur, Robert Fox, Vikas Gupta, Anthony Yu, Ken Giewont, John Pellerin, Ted Letavic
IEEE Journal of Selected Topics in Quantum Electronics 29 (3: Photon. Elec …, 2023
Photonic-integrated circuit fabrication and test approaches
Ajey P Jacob, Sujith Chandran, Joris Van Campenhout, Marianna Pantouvaki, John Heck, Ken Giewont, Michal Rakowski, Yusheng Bian, Peter Debackere, Matthias Kuntz
Integrated Photonics for Data Communication Applications, 369-410, 2023
2022
Towards energy-efficient hyperspectral image processing inside camera pixels
Gourav Datta, Zihan Yin, Ajey P Jacob, Akhilesh R Jaiswal, Peter A Beerel
European Conference on Computer Vision, 303-316, 2022
Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments
B Peng, AP Jacob, Y Bian
US Patent 11,467,343, 2022
Array of integrated pixel and memory cells for deep in-sensor, in-memory computing
A Jaiswal, AP Jacob
US Patent 11,468,146, 2022
P2M-DeTrack: Processing-in-Pixel-in-Memory for Energy-efficient and Real-Time Multi-Object Detection and Tracking
Gourav Datta, Souvik Kundu, Zihan Yin, Joe Mathai, Zeyu Liu, Zixu Wang, Mulin Tian, Shunlin Lu, Ravi Teja Lakkireddy, Andrew Schmidt, Wael Abd-Almageed, Ajey Jacob, Akhilesh Jaiswal, Peter Beerel
2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration …, 2022
Modeling the energy efficiency of GEMM using optical random access memory
Bingyi Zhang, Akhilesh Jaiswal, Clynn Mathew, Ravi Teja Lakkireddy, Ajey P Jacob, Sasindu Wijeratne, Viktor Prasanna
2022 IEEE High Performance Extreme Computing Conference (HPEC), 1-7, 2022
Performance modeling sparse mttkrp using optical static random access memory on fpga
Sasindu Wijeratne, Akhilesh Jaiswal, Ajey P Jacob, Bingyi Zhang, Viktor Prasanna
2022 IEEE High Performance Extreme Computing Conference (HPEC), 1-7, 2022
A processing-in-pixel-in-memory paradigm for resource-constrained tinyml applications
Gourav Datta, Souvik Kundu, Zihan Yin, Ravi Teja Lakkireddy, Joe Mathai, Ajey P Jacob, Peter A Beerel, Akhilesh R Jaiswal
Scientific Reports 12 (1), 14396, 2022
Waveguide-confining layer with gain medium to emit subwavelength lasers, and method to form same
Y Bian, AP Jacob
US Patent 11,381,053, 2022
Heterogeneously integrated quantum chip interposer packaging
Ramesh Kudalippalliyalil, Sujith Chandran, Akhilesh Jaiswal, Kang L Wang, Ajey P Jacob
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), 1869-1874, 2022
Coupled Microdisk Resonators for Efficient Electro-Optic Quantum Frequency Conversion
Ramesh Kudalippalliyalil, Sujith Chandran, Akhilesh Jaiswal, Ajey P Jacob
2022 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2022
Photodetectors with adjacent anode-cathode pairs
Y Bian, M Rakowski, WS Lee, A Chowdhury, AP Jacob
US Patent 11,329,087, 2022
Polarizers based on looped waveguide crossings
Y Bian, S Chandran, J Viegas, H Zafar, AP Jacob
US Patent 11,320,590, 2022
Separate absorption charge and multiplication avalanche photodiode structure and method of making such a structure
AP Jacob, Y Bian
US Patent 11,309,447, 2022
Multimode waveguide bends with features to reduce bending loss
Y Bian, AP Jacob
US Patent 11,275,207, 2022
Toward efficient hyperspectral image processing inside camera pixels
Gourav Datta, Zihan Yin, Ajey Jacob, Akhilesh R Jaiswal, Peter A Beerel
arXiv preprint arXiv:2203.05696, 2022
Optical power splitters including a non-linear waveguide taper
S Chandran, Y Bian, J Viegas, AP Jacob
US Patent 11,256,030, 2022
Photonic transmitter drivers with logic using cascaded differential transistor pairs stepped by supply voltage differences
AP Jacob, SM Serunjogi, MAT Sanduleanu
US Patent 11,239,633, 2022
Integrated circuits with embedded memory structures and methods for fabricating the same
AP Jacob, E Ramanathan
US Patent 11,233,191, 2022
Image sensor incorporating an array of optically switchable magnetic tunnel junctions
AR Jaiswal, AP Jacob, Y Bian, DC Pritchard
US Patent 11,226,231, 2022
Polarization switches including a phase change material
SM Shank, Y Bian, AP Jacob
US Patent 11,221,506, 2022
2021
Towards scalable, energy-efficient and ultra-fast optical sram
Ramesh Kudalippalliyalil, Sujith Chandran, Ajey P Jacob, Akhilesh Jaiswal
arXiv preprint arXiv:2111.13682, 2021
ML-enabled assured microelectronics manufacturing: a technique to mitigate hardware trojan detection
AP Jacob, J Damoulakis, A Jaiswal, DK Shenoy, A Rittenbach
US Patent App. 17/244,183, 2021
Circuit structure and method for memory storage with memory cell and MRAM stack
AR Jaiswal, AP Jacob, SR Soss
US Patent 11,145,348, 2021
Laser with a gain medium layer doped with a rare earth metal with upper and lower light-confining features
Y Bian, AP Jacob
US Patent 11,088,503, 2021
Sensing scheme for STT-MRAM using low-barrier nanomagnets
A Agrawal, AP Jacob, BC Paul
US Patent 11,087,814, 2021
Intrinsic Spike Timing Dependent Plasticity in Stochastic Magnetic Tunnel Junctions Mediated by Heat Dynamics
Humberto Inzunza Velarde, Jheel Nagaria, Zihan Yin, Ajey Jacob, Akhilesh Jaiswal
arXiv e-prints, arXiv: 2108.12684, 2021
Compact MMI-based AWGs in a scalable monolithic silicon photonics platform
Ayat M Taha, Sujith Chandran, Jaime Viegas, Yusheng Bian, Michal Rakowski, Rod Augur, Ajey Jacob, Marcus S Dahlem
IEEE Photonics Journal 13 (4), 1-6, 2021
Augmented memory computing: dynamically augmented SRAM storage for data intensive applications
Haripriya Sheshadri, Shwetha Vijayakumar, Ajey Jacob, Akhilesh Jaiswal
arXiv preprint arXiv:2109.03022, 2021
Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
A Jaiswal, AP Jacob
US Patent 11,069,402, 2021
Waveguides with cladding layers of gradated refractive index
Y Bian, AP Jacob
US Patent 11,067,749, 2021
Trench-based optical components for photonics chips
C Meagher, K Nummy, Y Bian, AP Jacob
US Patent 11,067,751, 2021
Non-volatile memory element arrays in a wheatstone bridge arrangement
AP Jacob, A Agrawal
US Patent 11,056,535, 2021
Separate absorption charge and multiplication avalanche photodiode structure and method of making such a structure
AP Jacob, Y Bian
US Patent App. 16/729,930, 2021
Waveguide couplers providing conversion between waveguides
Y Bian, AP Jacob
US Patent 11,036,003, 2021
Monolithically integrated silicon nitride platform
Yusheng Bian, Colleen Meagher, Karen Nummy, Sujith Chandran, Won Suk Lee, Abdelsalam Aboketaf, Danhao Ma, Ryan Sporer, Michal Rakowski, Nuh Yuksek, Monica Esopi, Bo Peng, Yangyang Liu, Abu Thomas, Tymon Barwicz, Takako Hirokawa, Javier Ayala, Asli Sahin, Andy Stricker, Subramanian Krishnamurthy, Shuren Hu, Zoey Sowinski, Kate McLean, Louis Medina, Kevin Dezfulian, Michelle Zhang, Mona Nafari, Zhuoqiang Jia, Kaushikee Mishra, Asif Chowdhury, Francis Afzal, Brendan Harris, Salman Mosleh, Bruna Paredes, Marcus Dahlem, Jaime Viegas, Rod Augur, Dave Riggs, Luke Lee, Wenhe Lin, Ajey Jacob, Fen Jamin, Mai Randall, Hemanth Parsa, Vikas Gupta, Anthony Yu, Ken Giewont, Ted Letavic, John Pellerin
Optical Fiber Communication Conference, Th1A. 46, 2021
3D silicon photonic interconnects and integrated circuits based on phase matching
Yusheng Bian, Ajey Jacob, Michal Rakowski, Ryan Sporer, Takako Hirokawa, Won Suk Lee, Asif Chowdhury, Abu Thomas, Bo Peng, Abdelsalam Aboketaf, Javier Ayala, Rod Augur, Ken Giewont, John Pellerin
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 2279-2284, 2021
Integrated laser attach technology on a monolithic silicon photonics platform
Yusheng Bian, Koushik Ramachandran, Bo Peng, Brittany Hedrick, Scott Mills, Keith Donegan, Monica Esopi, Takako Hirokawa, Ajey Jacob, Vaishnavi Karra, Firat Yasar, Benjamin Fasano, Asli Sahin, Thomas Houghton, Karen Nummy, Armand Rundquist, Ed Vail, Hanyi Ding, Kevin Dezfulian, Zhuojie Wu, Daniel Fisher, Jim Pape, Jay Steffes, Louis Medina, Subharup Gupta Roy, Harry Cox, Bart Green, Jorge Lubguban, Asif Chowdhury, Won Suk Lee, Abdelsalam Aboketaf, Michal Rakowski, Kate McLean, Zoey Sowinski, Oh-Jung Kwou, Gabrielle Robert, Massimo Sorbara, Subramanian Krishnamurthy, Andy Stricker, Jae Kyu Cho, Ian Melville, Dave Riggs, Rod Augur, Norman Robson, Daniel Berger, Luke Lee, Vikas Gupta, Anthony Yu, Ken Giewont, Ted Letavic, John Pellerin
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 237-244, 2021
Non-planar grating couplers for antennas
Y Bian, AP Jacob, M Rakowski, B Peng
US Patent 11,002,916, 2021
Apparatus and method for in-memory binary convolution for accelerating deep binary neural networks based on a non-volatile memory structure
A Agrawal, AP Jacob
US Patent 10,997,498, 2021
Waveguide crossings having arms shaped with a non-linear curvature
AP Jacob, Y Bian, S Chandran, M Dahlem
US Patent 10,989,873, 2021
Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments
B Peng, AP Jacob, Y Bian
US Patent 10,989,876, 2021
MRAM device comprising random access memory (RAM) and embedded read only memory (ROM)
A Jaiswal, AP Jacob, S Soss
US Patent 10,964,367, 2021
Optical fiber coupler structure having manufacturing variation-sensitive transmission blocking region
B Peng, AP Jacob, Y Bian
US Patent 10,955,614, 2021
Hybrid wavelength-division multiplexing filters
S Chandran, M Dahlem, AP Jacob, Y Bian, B Paredes, J Viegas
US Patent 10,942,321, 2021
Semiconductor detectors with butt-end coupled waveguide and method of forming the same
Y Bian, AP Jacob
US Patent 10,910,503, 2021
Controlling optical return loss in production silicon photonic metamaterial fiber couplers
Bo Peng, Tymon Barwicz, Yusheng Bian, Asli Sahin, Thomas Houghton, Shuren Hu, Michal Rakowski, Javier Ayala, Colleen Meagher, Zoey Sowinski, Andy Stricker, Ajey Jacob, Karen Nummy, Ken Giewont
Optics Letters 46 (2), 400-403, 2021
2020
Beam shaping for ultra-compact waveguide crossings on monolithic silicon photonics platform
Sujith Chandran, Marcus Dahlem, Yusheng Bian, Paulo Moreira, Ajey P Jacob, Michal Rakowski, Andy Stricker, Karen Nummy, Colleen Meagher, Bo Peng, Abu Thomas, Shuren Hu, Jan Petykiewicz, Zoey Sowinski, Won Suk Lee, Rod Augur, Dave Riggs, Ted Letavic, Anthony Yu, Ken Giewont, John Pellerin, Jaime Viegas
Optics Letters 45 (22), 6230-6233, 2020
Multimode waveguide bends with features to reduce bending loss
Y Bian, AP Jacob
US Patent 10,816,727, 2020
Edge couplers for photonics applications
B Peng, Y Bian, AP Jacob, T Houghton, A Sahin
US Patent 10,816,726, 2020
Semiconductor detectors integrated with Bragg reflectors
AP Jacob, TJ Letavic, A Thomas, Y Bian
US Patent 10,818,807, 2020
Waveguide intersections incorporating a waveguide crossing
Y Bian, AP Jacob, A Thomas
US Patent 10,816,725, 2020
Heterogeneous directional couplers for photonics chips
Y Bian, AP Jacob, SM Shank
US Patent 10,795,083, 2020
Bragg gratings with airgap cladding
AP Jacob, Y Bian, T Letavic, KJ Giewont, SM Shank
US Patent 10,795,082, 2020
In-memory binary convolution for accelerating deep binary neural networks
A Agrawal, AP Jacob
US Patent App. 16/366,187, 2020
3D integrated laser attach technology on 300-mm monolithic silicon photonics platform
Yusheng Bian, Koushik Ramachandran, Bo Peng, Brittany Hedrick, Keith Donegan, Jorge Lubguban, Benjamin Fasano, Armand Rundquist, Jim Pape, Asli Sahin, Thomas Houghton, Karen Nummy, Jay Steffes, Louis Medina, Subharup Gupta Roy, Harry Cox, Bart Green, Kevin Dezfulian, Won Suk Lee, Andy Stricker, Kate Mclean, Shuren Hu, Zoey Sowinski, Colleen Meagher, Abdelsalam Aboketaf, Michal Rakowski, Mai Randall, Ian Melville, Dave Riggs, Ajey Jacob, Rod Augur, Daniel Berger, Anthony Yu, Ken Giewont, John Pellerin
2020 IEEE Photonics Conference (IPC), 1-2, 2020
Towards low-loss monolithic silicon and nitride photonic building blocks in state-of-the-art 300mm CMOS foundry
Yusheng Bian, Javier Ayala, Colleen Meagher, Bo Peng, Michal Rakowski, Ajey Jacob, Karen Nummy, Andy Stricker, Zoey Sowinski, Asli Sahin, Abdelsalam Aboketaf, Shuren Hu, Ian Stobert, Kate Mclean, Louis Medina, Kevin Dezfulian, Brendan Harris, Subramanian Krishnamurthy, Thomas Houghton, Won Suk Lee, Massimo Sorbara, Dave Riggs, Ted Letavic, Anthony Yu, Ken Giewont, John Pellerin
Frontiers in Optics, FW5D. 2, 2020
Light manipulation in a monolithic silicon photonics platform leveraging 3D coupling and decoupling
Yusheng Bian, Ajey Jacob, Abu Thomas, Bo Peng, Michal Rakowski, Won Suk Lee, Rod Augur
Frontiers in Optics, FTu6E. 3, 2020
FinFET with multilayer fins for multi-value logic (MVL) applications
MH Chi, A Jacob, A Paul
US Patent 10,756,213, 2020
Stacked waveguide arrangements providing field confinement
Y Bian, AP Jacob
US Patent 10,746,921, 2020
Resistive nonvolatile memory structure employing a statistical sensing scheme and method
AP Jacob, A Agrawal
US Patent 10,726,896, 2020
Ultra-Compact Waveguide Crossings using Cosine Tapers on a Monolithic Silicon Photonics Platform
Sujith Chandran, Yusheng Bian, Paulo Moreira, Ajey Jacob, Marcus S Dahlem, Yonas Gebregiorgis, Marios Papadovasilakis, Salim Alkaabi, Jaime Viegas, Michal Rakowski, Andy Stricker, Karen Nummy, Colleen Meagher, Bo Peng, Abu Thomas, Shuren Hu, Jan Petykiewicz, Dave Riggs, Ted Letavic, Anthony Yu, Ken Giewont, John Pellerin
Integrated Photonics Research, Silicon and Nanophotonics, ITh3A. 4, 2020
Multiple-layer arrangements including one or more dielectric layers over a waveguide
Y Bian, AP Jacob
US Patent 10,698,159, 2020
Electro-optic modulators with layered arrangements
Y Bian, AP Jacob, A Thomas
US Patent 10,684,530, 2020
Vertical nanowires formed on upper fin surface
S Bentley, RA Farrell, G Schmid, AP Jacob
US Patent 10,685,847, 2020
Hybrid vanadate silicon nanophotonic platform for extreme light management at telecom bands
Yusheng Bian, Ajey Jacob, Won Suk Lee, Bo Peng, Michal Rakowski, Abdelsalam Aboketaf, Rod Augur
2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 168-174, 2020
Composite waveguiding structures including semiconductor fins
Y Bian, A Thomas, AP Jacob
US Patent 10,670,804, 2020
Resistive nonvolatile memory cells with shared access transistors
AP Jacob, A Agrawal, BC Paul
US Patent 10,665,281, 2020
Electro-optic modulators with stacked metal, dielectric, and active layers
Y Bian, AP Jacob, A Thomas
US Patent 10,649,245, 2020
Back-end-of-line blocking structures arranged over a waveguide core
Y Bian, AP Jacob, A Thomas
US Patent 10,649,140, 2020
Polarizers and polarization splitters phase-matched with a back-end-of-line layer
Y Bian, AP Jacob, A Thomas
US Patent 10,641,956, 2020
A neuromorphic SLAM architecture using gated-memristive synapses
Alexander Jones, Andrew Rush, Cory Merkel, Eric Herrmann, Ajey P Jacob, Clare Thiem, Rashmi Jha
Neurocomputing 381, 89-104, 2020
Multiple-layer arrangements using tunable materials to provide switchable optical components
Y Bian, A Thomas, AP Jacob
US Patent 10,585,245, 2020
A CMOS compatible monolithic fiber attach solution with reliable performance and self-alignment
Bo Peng, Tymon Barwicz, Asli Sahin, Thomas Houghton, Brittany Hedrick, Yusheng Bian, Michal Rakowski, Shuren Hu, Javier Ayala, Colleen Meagher, Zoey Sowinski, Karen Nummy, Andy Stricker, Jorge Lubguban, Hui Chen, Benjamin Fasano, Ian Melville, Zhuo-jie Wu, Jae Kyu Cho, Ajey Jacob, Dave Riggs, Daniel Berger, Ted Letavic, Anthony Yu, John Pellerin, Ken Giewont
Optical Fiber Communication Conference, Th3I. 4, 2020
45nm CMOS-silicon photonics monolithic technology (45CLO) for next-generation, low power and high speed optical interconnects
Michal Rakowski, Colleen Meagher, Karen Nummy, Abdelsalam Aboketaf, Javier Ayala, Yusheng Bian, Brendan Harris, Kate Mclean, Kevin McStay, Asli Sahin, Louis Medina, Bo Peng, Zoey Sowinski, Andy Stricker, Thomas Houghton, Crystal Hedges, Ken Giewont, Ajey Jacob, Ted Letavic, Dave Riggs, Anthony Yu, John Pellerin
Optical Fiber Communication Conference, T3H. 3, 2020
Perioperative fracture risk and two-year survivorship of a short tapered femoral stem following direct anterior approach cementless total hip arthroplasty with a fracture table
Samantha Andrews, Gregory J Harbison, Ian Hasegawa, Emily Unebasami, Cass Nakasone
The Journal of Hip Surgery 4 (01), 033-037, 2020
Slot assisted grating based transverse magnetic (TM) transmission mode pass polarizer
AP Jacob, MVS Dahlem, H Zafar, A Khilo, S Chandran
US Patent 10,557,989, 2020
2019
Magneto-resistive memory structures with improved sensing, and associated sensing methods
A Jaiswal, AP Jacob, BC Paul, W Taylor, DPC Shum
US Patent 10,515,679, 2019
Integrated circuits having memory cells with shared bit lines and shared source lines
BC Paul, A Jaiswal, AP Jacob, W Taylor, DPC Shum
US Patent 10,510,392, 2019
Integrated circuits with look up tables, and methods of producing and operating the same
A Jaiswal, AP Jacob
US Patent 10,468,083, 2019
Logic-in-memory computations for non-volatile resistive random access memory (RAM) array
AR Jaiswal, AP Jacob
US Patent 10,468,084, 2019
Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for differential bit operation and methods for fabricating the same
AP Jacob, J Akhilesh
US Patent 10,468,456, 2019
Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor
AP Jacob, XA Tran, H Zang, B Haran, S Kalaga
US Patent 10,461,173, 2019
Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes
BJ Pawlak, G Bouche, AP Jacob
US Patent 10,453,750, 2019
Waveguides including a patterned dielectric layer
Y Bian, A Thomas, AP Jacob, KJ Giewont, K Nummy, A Stricker, B Peng
US Patent 10,444,433, 2019
Polarization splitters based on stacked waveguides
A Thomas, Y Bian, AP Jacob
US Patent 10,429,581, 2019
Waveguide-to-waveguide couplers with multiple tapers
Y Bian, AP Jacob, SM Shank
US Patent 10,429,582, 2019
Optical return loss control in silicon photonic metamaterial waveguides
Bo Peng, Tymon Barwicz, Yusheng Bian, Shuren Hu, Michal Rakowski, Karen Nummy, Ken Giewont, Ajey Jacob
Frontiers in Optics, FM3C. 5, 2019
Integrated circuits including magnetic random access memory structures and methods for fabricating the same
AP Jacob, J Akhilesh
US Patent 10,411,069, 2019
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
MH Chi, A Jacob, A Paul
US Patent 10,388,790, 2019
Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same
AP Jacob, J Akhilesh
US Patent 10,381,406, 2019
A segmented attractor network for neuromorphic associative learning
Alexander Jones, Rashmi Jha, Ajey P Jacob, Cory Merkel
Proceedings of the International Conference on Neuromorphic Systems, 1-8, 2019
Heterogeneous integration of 3D SI and III-V vertical nanowire structures for mixed signal circuits fabrication
SK Patil, AP Jacob
US Patent 10,319,642, 2019
Vertical field effect transistor formation with critical dimension control
RXSBMGSCPSSHZXWYQAPJMKASPAJSHJH Zhang
US Patent 6,879,106, 2019
Multiple directed self-assembly material mask patterning for forming vertical nanowires
S Bentley, RA Farrell, G Schmid, AP Jacob
US Patent 10,186,577, 2019
2018
Methods of forming a vertical transistor device with a channel structure comprised of alternative semiconductor materials
AP Jacob
US Patent 10,090,385, 2018
A Retrospective View on the Technology Evolution to Support Low Power Mobile Application
Bipul C Paul, Ajey P Jacob, William Taylor, Randy Mann, Joe Versaggi, Edward Nowak, Lars W Liebmann
Journal of Low Power Electronics 14 (3), 374-392, 2018
Methods of forming NMOS and PMOS finFET devices and the resulting product
AP Jacob
US Patent 10,056,300, 2018
Programmable via devices with metal/semiconductor via links and fabrication methods thereof
AP Jacob, SK Patil, MH Chi
US Patent 10,056,331, 2018
Semiconductor wafers with reduced bow and warpage
AP Jacob, SR Banna, DK Nayak, BJ Pawlak
US Patent 10,056,453, 2018
Integrated display system with multi-color light emitting diodes (LEDs)
S Banna, S Jha, D Nayak, AP Jacob
US Patent 10,037,981, 2018
Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices
AP Jacob, MK Akarvardar, JA Fronheiser
US Patent 10,026,659, 2018
Methods of forming graphene contacts on source/drain regions of FinFET devices
AP Jacob
US Patent 9,972,537, 2018
Common fabrication of multiple FinFETs with different channel heights
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,960,257, 2018
Method for forming nanowires including multiple integrated devices with alternate channel materials
AP Jacob
US Patent 9,953,882, 2018
Evaluation of thermal stability of spin-transfer torque based magnoresistive random-access memory for cache applications in advanced technology nodes
H Dixit, S Agarwal, D Datta, A Jacob, D Shum, F Benistant
2018 IEEE International Magnetics Conference (INTERMAG), 1-1, 2018
Light emitting diodes (LEDs) with integrated CMOS circuits
D Nayak, S Banna, AP Jacob
US Patent 9,941,329, 2018
Silicon waveguide devices in integrated photonics
RA Augur, AP Jacob, SM Shank
US Patent 9,864,132, 2018
Non-planar monolithic hybrid optoelectronic structures and methods
AP Jacob
US Patent 9,864,136, 2018
Directed self-assembly material etch mask for forming vertical nanowires
S Bentley, RA Farrell, G Schmid, AP Jacob
US Patent 9,865,682, 2018
Forming a silicon based layer in a trench to prevent corner rounding
AP Jacob, J Fronheiser, B Doris, H Bu
US Patent App. 15/198,570, 2018
Hybrid vanadate waveguiding configurations for extreme optical confinement and efficient polarization management in the near-infrared
Yusheng Bian, Lei Kang, Qiang Ren, Yuanxia Zheng, Roman Engel-Herbert, Pingjuan L Werner, Douglas H Werner, Ajey P Jacob, Abu Thomas
Nanoscale 10 (35), 16667-16674, 2018
2017
Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
MK Akarvardar, AP Jacob
US Patent 9,842,897, 2017
14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Zoran Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, HJ Kim, R Sporer, C Serrao, A Busquet, P Polakowski, J Müller, W Kleemeier, A Jacob, D Brown, A Knorr, R Carter, S Banna
2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017
Method for forming nanowires including multiple integrated devices with alternate channel materials
AP Jacob
US Patent 9,831,131, 2017
Programmable via devices with metal/semiconductor via links and fabrication methods thereof
AP Jacob, SK Patil, MH Chi
US Patent 9,812,393, 2017
Methods of forming PMOS and NMOS FinFET devices on CMOS based integrated circuit products
AP Jacob
US Patent 9,799,767, 2017
Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication
SK Patil, AP Jacob
US Patent 9,754,843, 2017
Methods of forming PMOS FinFET devices and multiple NMOS FinFET devices with different performance characteristics
AP Jacob
US Patent 9,748,387, 2017
Methods of forming NMOS and PMOS FinFET devices and the resulting product
AP Jacob
US Patent 9,741,622, 2017
Electrical isolation of FinFET active region by selective oxidation of sacrificial layer
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,716,174, 2017
On-chip variable capacitor with geometric cross-section
S Patil, AP Jacob, SM Pandey
US Patent App. 14/987,211, 2017
Directed self-assembly material growth mask for forming vertical nanowires
S Bentley, RA Farrell, G Schmid, AP Jacob
US Patent 9,698,025, 2017
Programmable devices with current-facilitated migration and fabrication methods
SK Patil, MH Chi, AP Jacob
US Patent 9,691,497, 2017
Fin isolation structures facilitating different fin isolation schemes
AP Jacob, K Cheng, B Doris, N Loubet, P Khare, R Divakaruni
US Patent 9,673,222, 2017
Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material
AP Jacob, B Doris, K Cheng, A Khakifirooz, K Rim
US Patent 9,673,083, 2017
Scaling challenges for advanced CMOS devices
Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus TP Lee, Bill Taylor
International Journal of High Speed Electronics and Systems 26 (01n02), 1740001, 2017
FinFET device including a dielectrically isolated silicon alloy fin
AP Jacob
US Patent 9,634,123, 2017
Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device
AP Jacob, B Doris, K Cheng, N Loubet
US Patent 9,627,245, 2017
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices
J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
US Patent 9,614,058, 2017
Methods of modulating strain in PFET and NFET FinFET semiconductor devices
AP Jacob, MK Akarvardar, B Doris, A Khakifirooz
US Patent 9,589,849, 2017
Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials
MK Akarvardar, AP Jacob
US Patent 9,590,040, 2017
Methods for fabricating programmable devices and related structures
SK Patil, AP Jacob, MH Chi
US Patent 9,564,447, 2017
Self-aligned dual-height isolation for bulk FinFET
MK Akarvardar, SJ Bentley, K Cheng, BB Doris, J Fronheiser, AP Jacob, ...
US Patent 9,564,486, 2017
Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices
AP Jacob, WP Maszara, K Akarvardar
US Patent 9,564,367, 2017
Electrical properties related to growth defects in metamorphic GaSb films on Si
Shun Sasaki, Katie Dropiewski, Shailesh Madisetti, Vadim Tokranov, Michael Yakimov, Serge Oktyabrsky, Steven Bentley, Rohit Galatage, Ajey P Jacob
Journal of Vacuum Science & Technology B 35 (1), 2017
2016
Methods of removing portions of fins by preforming a selectively etchable material in the substrate
Y Qi, AP Jacob
US Patent 9,524,908, 2016
Semiconductor devices with dummy gate structures partially on isolation regions
R Xie, X Cai, AP Jacob, A Knorr, C Prindle
US Patent 9,496,354, 2016
Finfet semiconductor devices with stressed channel regions
X Cai, R Xie, K Cheng, A Khakifirooz, AP Jacob, WP Maszara
US Patent App. 15/186,632, 2016
Methods of forming strained and relaxed germanium fins for PMOS and NMOS finFET devices, respectively
AP Jacob
US Patent 9,455,199, 2016
Methods of forming doped epitaxial SiGe material on semiconductor devices
AP Jacob, JA Fronheiser, MK Akarvardar
US Patent 9,455,140, 2016
Controlled junction transistors and methods of fabrication
SJ Bentley, AP Jacob, CY Chen, T Yamashita
US Patent App. 15/154,495, 2016
FinFET semiconductor device with isolated fins made of alternative channel materials
AP Jacob, MK Akarvardar
US Patent 9,425,315, 2016
Methods of forming alternative channel materials on FinFET semiconductor devices
AP Jacob, MK Akarvardar
US Patent 9,425,289, 2016
FinFET device including a uniform silicon alloy fin
AP Jacob, JA Fronheiser, MK Akarvardar, S Bentley
US Patent 9,406,803, 2016
Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
MK Akarvardar, AP Jacob
US Patent 9,385,233, 2016
Semiconductor devices with conductive contact structures having a larger metal silicide contact area
R Xie, WJ Taylor Jr, AP Jacob
US Patent App. 15/065,998, 2016
Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices
AP Jacob, R Xie, M Hargrove
US Patent 9,373,721, 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
Dechao Guo, G Karve, G Tsutsui, Kwan-Yong Lim, R Robison, T Hook, R Vega, Derrick Liu, S Bedell, Shogo Mochizuki, F Lie, Kerem Akarvardar, Miaomiao Wang, Ruqiang Bao, Sean Burns, Victor Chan, Kangguo Cheng, J Demarest, Jody Fronheiser, Pouya Hashemi, James Kelly, Juntao Li, Nicolas Loubet, Pietro Montanini, Bhagawan Sahu, M Sankarapandian, Stuart Sieg, J Sporre, J Strane, R Southwick, N Tripathi, Rajasekhar Venigalla, Jing Wang, K Watanabe, Chun-Wing Yeung, Dinesh Gupta, Bruce Doris, Nelson Felix, Ajey Jacob, H Jagannathan, Sivananda Kanakasabapathy, Renee Mo, Vijay Narayanan, Devendra Sadana, Phil Oldiges, James Stathis, Tenko Yamashita, Vamsi Paruchuri, Matthew Colburn, Andreas Knorr, Rama Divakaruni, Huiming Bu, M Khare
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Transistors comprising doped region-gap-doped region structures and methods of fabrication
SJ Bentley, AP Jacob, CY Chen, T Yamashita
US Patent 9,368,591, 2016
Methods of forming substrates comprised of different semiconductor materials and the resulting device
BJ Pawlak, S Bentley, A Jacob
US Patent 9,368,578, 2016
Channel cladding last process flow for forming a channel region on a FinFET device
AP Jacob, WP Maszara, JA Fronheiser
US Patent 9,362,405, 2016
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
MH Chi, A Jacob, A Paul
US Patent 9,362,277, 2016
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz
US Patent 9,349,840, 2016
Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material
AP Jacob, B Doris, K Cheng, A Khakifirooz, K Rim
US Patent 9,349,658, 2016
Fin transformation process and isolation structures facilitating different Fin isolation schemes
AP Jacob, K Cheng, BB Doris, N Loubet, P Khare, R Divakaruni
US Patent 9,349,730, 2016
Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region
AP Jacob, M Hargrove, JA Fronheiser, MK Akarvardar
US Patent 9,343,300, 2016
Self-aligned dual-height isolation for bulk FinFET
MK Akarvardar, SJ Bentley, K Cheng, BB Doris, J Fronheiser, AP Jacob, ...
US Patent 9,324,790, 2016
Methods of removing fins for finfet semiconductor devices
R Xie, A Knorr, AP Jacob, M Hargrove
US Patent 9,318,342, 2016
Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices
R Xie, WJ Taylor Jr, AP Jacob
US Patent 9,318,552, 2016
Methods of forming FinFET devices with alternative channel materials
AP Jacob, MK Akarvardar, M Hargrove, R Xie
US Patent 9,312,387, 2016
Device isolation in FinFET CMOS
AP Jacob, MK Akarvardar, S Bentley, T Nagumo, K Cheng, BB Doris, ...
US Patent 9,305,846, 2016
Finfet semiconductor device with isolated channel regions
AP Jacob, N Loubet
US Patent App. 14/963,683, 2016
Semiconductor devices with replacement gate structures
R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove
US Patent App. 14/963,378, 2016
Methods of forming semiconductor devices including an electrically-decoupled fin
S Bentley, AP Jacob
US Patent 9,293,324, 2016
Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device
AP Jacob, MK Akarvardar
US Patent 9,293,587, 2016
Method for single fin cuts using selective ion implants
X Cai, AP Jacob, R Xie, B Doris, K Cheng, JR Cantone, S Mignot, ...
US Patent 9,287,130, 2016
Methods of forming metastable replacement fins for a finfet semiconductor device by performing a replacement growth process
AP Jacob, MK Akarvardar, J Fronheiser, WP Maszara
US Patent App. 14/931,277, 2016
Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices
AP Jacob
US Patent 9,269,628, 2016
Retrograde doped layer for device isolation
AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...
US Patent App. 14/882,308, 2016
Uniaxially-strained fd-soi finfet
P Morin, M Vinet, L Grenouillet, AP Jacob
US Patent 9,252,208, 2016
Dual-width fin structure for finfets devices
MK Akarvardar, AP Jacob, A Knorr
US Patent App. 14/341,423, 2016
Solid-state supercapacitor
BS Dunn, CO Chui, AP Jacob, D Membreno, L Smith
US Patent 9,245,694, 2016
Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,245,980, 2016
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
AP Jacob, MK Akarvardar, J Fronheiser, WP Maszara
US Patent 9,240,342, 2016
Methods of forming isolated channel regions for a finfet semiconductor device and the resulting device
AP Jacob, N Loubet
US Patent App. 14/859,729, 2016
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove
US Patent 9,236,258, 2016
Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices
R Xie, AP Jacob
US Patent 9,236,479, 2016
2015
Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
Y Qi, AP Jacob, S Liang
US Patent 9,224,605, 2015
FinFET with insulator under channel
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,224,865, 2015
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz
US Patent 9,214,553, 2015
Retrograde doped layer for device isolation
AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...
US Patent 9,190,411, 2015
Semiconductor devices including an electrically-decoupled fin and methods of forming the same
S Bentley, AP Jacob
US Patent App. 14/274,406, 2015
Methods of forming epitaxial semiconductor material on source/drain regions of a finfet semiconductor device and the resulting devices
JA Fronheiser, BV Krishnan, MK Akarvardar, S Bentley, AP Jacob, J Liu
US Patent App. 14/164,934, 2015
Process for faciltiating fin isolation schemes
AP Jacob, K Cheng, BB Doris, N Loubet, P Khare, R Divakaruni
US Patent 9,093,496, 2015
Fin pitch scaling and active layer isolation
AP Jacob, MK Akarvardar, SJ Bentley, BJ Pawlak
US Patent 9,076,842, 2015
Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices
R Xie, AP Jacob
US Patent 9,059,042, 2015
Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device
AP Jacob, MK Akarvardar
US Patent App. 14/086,199, 2015
Methods of forming stressed multilayer FinFET devices with alternative channel materials
A Paul, AP Jacob, MH Chi
US Patent 9,023,705, 2015
Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs
MK Akarvardar, AP Jacob
US Patent 9,006,077, 2015
FinFET integrated circuits and methods for their fabrication
MK Akarvardar, X Cai, AP Jacob
US Patent 8,987,094, 2015
Device isolation in finFET CMOS
AP Jacob, MK Akarvardar, SJ Bentley, T Nagumo, K Cheng, BB Doris, ...
US Patent 8,963,259, 2015
Structures and methods integrating different fin device architectures
AP Jacob, MK Akarvardar, MJ Hargrove
US Patent App. 13/945,379, 2015
Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects
Shun Sasaki, Shailesh Madisetti, Vadim Tokranov, Michael Yakimov, Makoto Hirayama, Steven Bentley, Rohit Galatage, Ajey P Jacob, Serge Oktyabrsky
MRS Online Proceedings Library (OPL) 1790, 13-18, 2015
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
X Cai, AP Jacob, DT Pham, MV Raymond, CM Prindle, CB Labelle, ...
US Patent 9,184,263, 2015
Methods of forming epitaxial semiconductor cladding material on fins of a FinFET semiconductor device
Y Qi, AP Jacob, JA Fronheiser, MK Akarvardar, DP Brunco
US Patent App. 14/267,634, 2015
Spin wave scattering and interference in ferromagnetic cross
Kasuni Nanayakkara, Ajey P Jacob, Alexander Kozhanov
Journal of Applied Physics 118 (16), 2015
Method to form defect free replacement fins by H2 anneal
J Fronheiser, MK Akarvardar, AP Jacob, S Bentley
US Patent 9,165,837, 2015
Methods of forming replacement spacer structures on semiconductor devices
R Xie, X Cai, AP Jacob, A Knorr, C Prindle
US Patent 9,147,748, 2015
Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materials
AP Jacob, MK Akarvardar
US Patent 9,147,616, 2015
Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process
R Xie, A Knorr, AP Jacob, M Hargrove
US Patent 9,147,730, 2015
Replacement fin insolation in a semiconductor device
AP Jacob, MH Chi
US Patent App. 14/195,884, 2015
Methods of forming a non-planar ultra-thin body device
R Xie, AP Jacob, M Hargrove, WJ Taylor Jr
US Patent App. 14/197,686, 2015
Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device
Y Qi, AP Jacob, S Liang
US Patent 9,123,627, 2015
Methods of forming isolated germanium-containing fins for a FinFET semiconductor device
AP Jacob, MK Akarvardar, JA Fronheiser, K Cheng, B Doris, K Rim
US Patent 9,117,875, 2015
2014
METHOD OF DEVICE ISOLATION IN CLADDING Si THROUGH IN SITU DOPING
AP Jacob, MK Akarvardar, BB Doris, A Khakifirooz
US Patent App. 13/921,265, 2014
Cross junction spin wave logic architecture
Kasuni Nanayakkara, Alexander Anferov, Ajey P Jacob, S James Allen, Alexander Kozhanov
IEEE Transactions on Magnetics 50 (11), 1-4, 2014
Spin transistor having multiferroic gate dielectric
KL Wang, A Poovannummoottil, F Xiu
US Patent 8,860,006, 2014
Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process
JA Fronheiser, JA Wahl, K Akarvardar, AP Jacob, DT Pham
US Patent 8,853,019, 2014
Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices
J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
US Patent App. 13/839,998, 2014
Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Makoto Hirayama, Serge Oktyabrsky, Steven Bentley, Ajey P Jacob
Journal of Vacuum Science & Technology B 32 (5), 2014
Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures
KM Akarvardar, AP Jacob
US Patent 8,809,947, 2014
Bottom oxidation through STI (BOTS)—A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
K Cheng, S Seo, J Faltermeier, D Lu, T Standaert, I Ok, A Khakifirooz, R Vega, T Levin, J Li, J Demarest, C Surisetty, D Song, H Utomo, R Chao, H He, A Madan, P DeHaven, N Klymko, Z Zhu, S Naczas, Y Yin, J Kuss, A Jacob, D Bae, K Seo, W Kleemeier, R Sampson, T Hook, B Haran, G Gifford, D Gupta, H Shang, H Bu, M Na, P Oldiges, T Wu, B Doris, K Rim, E Nowak, R Divakaruni, M Khare
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process
BJ Pawlak, S Bentley, A Jacob
US Patent 8,716,156, 2014
Methods of forming spin torque devices and structures formed thereby
DE Nikonov, GI Bourianoff, AP Jacob
US Patent 8,697,454, 2014
P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS
Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Shun Sasaki, Makoto Hirayama, Steven Novak, Steven Bentley, Ajey Jacob, Serge Oktyabrsky
ECS Transactions 61 (3), 163, 2014
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,673,718, 2014
GaSb on Si: structural defects and their effect on surface morphology and electrical properties
Shailesh Kumar Madisetti, Vadim Tokranov, Andrew Greene, Steven Novak, Michael Yakimov, Serge Oktyabrsky, Steven Bentley, Ajey P Jacob
MRS Online Proceedings Library (OPL) 1635, 115-120, 2014
2013
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,580,642, 2013
Methods of forming spin torque devices and structures formed thereby
DE Nikonov, GI Bourianoff, AP Jacob
US Patent 8,450,818, 2013
Interference based spin wave switching in the ferromagnetic cross.
Alexander Kozhanov, Alexander Anferov, Ajey P Jacob, S James Allen
APS March Meeting Abstracts 2013, J14. 003, 2013
2012
Spin wave scattering in ferromagnetic cross
Alexander Kozhanov, Alexander Anferov, Ajey P Jacob, S James Allen
arXiv preprint arXiv:1211.1259, 2012
Atomistic Analysis of Electrical Performance of Highly Scaled Si1-xGex p-FinFETs
Gerhard Klimeck Behtash Behin-Aein, Abhijeet Paul, Saumitra
Simulation of Semiconductor Processes and Devices 2012 (SISPAD),September 5 …, 2012
Alternative State Variables for Graphene Transistors
Kosmas Galatsis, Alexander Shailos, Ajey P Jacob, Kang L Wang
Graphene Nanoelectronics: From Materials to Circuits, 93-111, 2012
2011
Spintronics of nanostructured manganese germanium (MnGe) dilute magnetic semiconductor
KL Wang, F Xiu, AP Jacob
Silicon–Germanium (SiGe) Nanostructures, 575-609, 2011
2010
Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property
Yong Wang, Faxian Xiu, Ya Wang, Xufeng Kou, Ajey P Jacob, Kang L Wang, Jin Zou
Journal of alloys and compounds 508 (2), 273-277, 2010
Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1− xMnx grown on Si
Ya Wang, Faxian Xiu, Yong Wang, Hongyi Xu, De Li, Xufeng Kou, Kang L Wang, Ajey P Jacob, Jin Zou
Journal of Crystal Growth 312 (20), 3034-3039, 2010
Small form factor dual balanced photoreceiver with sensitive peak-level detectors for 40 Gb/s DQPSK applications
ML Nielsen, J Honecker, A Jacob, S Bottacchi, R Ludwig, G Unterbörsch, A Umbach
36th European Conference and Exhibition on Optical Communication, 1-3, 2010
Performance of magnetic quantum cellular automata and limitations due to thermal noise
Federico M Spedalieri, Ajey P Jacob, Dmitri E Nikonov, Vwani P Roychowdhury
IEEE Transactions on Nanotechnology 10 (3), 537-546, 2010
Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots
Faxian Xiu, Yong Wang, Jiyoung Kim, Augustin Hong, Jianshi Tang, Ajey P Jacob, Jin Zou, Kang L Wang
Nature Materials 9 (4), 337-344, 2010
Tadpole shaped Ge0. 96Mn0. 04 magnetic semiconductors grown on Si
Yong Wang, Faxian Xiu, Jin Zou, Kang L Wang, Ajey P Jacob
Applied Physics Letters 96 (5), 2010
2009
A magnetic amplifier for amplifying spin-wave signal
Mingqiang Bao, Alexander Khitun, JooYoung Lee, Ajey P Jacob, Kang L Wang
2009 Device Research Conference, 45-46, 2009
Collective-effect state variables for post-CMOS logic applications
A Chen, AP Jacob, CY Sung, KL Wang, A Khitun, W Porod
2009 Symposium on VLSI Technology, 132-133, 2009
Dispersion and spin wave “tunneling” in nanostructured magnetostatic spin waveguides
A Kozhanov, D Ouellette, M Rodwell, SJ Allen, AP Jacob, DW Lee, SX Wang
Journal of Applied Physics 105 (7), 2009
A microstrip spin-wave amplifier
Mingqiang Bao, Amber Chen, Alex Khitun, Kang Wang, Ajey Jacob
APS March Meeting Abstracts, X29. 011, 2009
Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics
Machteld I Van Der Meulen, Nikolay Petkov, Michael A Morris, Olga Kazakova, Xinhai Han, Kang L Wang, Ajey P Jacob, Justin D Holmes
Nano Letters 9 (1), 50-56, 2009
Dispersion in magnetostatic CoTaZr spin waveguides
A Kozhanov, D Ouellette, Z Griffith, M Rodwell, AP Jacob, DW Lee, SX Wang, SJ Allen
Applied Physics Letters 94 (1), 2009
2008
InAs/GaAs nanostructures grown on patterned Si (001) by molecular beam epitaxy
Jun He, Kameshwar Yadavalli, Zuoming Zhao, Ning Li, Zhibiao Hao, Kang L Wang, Ajey P Jacob
Nanotechnology 19 (45), 455607, 2008
Coplanar waveguide radio frequency ferromagnetic parametric amplifier
Mingqiang Bao, Alexander Khitun, Yina Wu, Joo-Young Lee, Kang L Wang, Ajey P Jacob
Applied Physics Letters 93 (7), 2008
Logic Devices with Spin Wave Buses: Potential Advantages and Shortcoming
Alexander Khitun, Mingqiang Bao, Ji-Young Kim, Augustin Hong, Ajey P Jacob, Kang L Wang
2008 Device Research Conference, 159-160, 2008
Spin wave logic circuit on silicon platform
Alexander Khitun, Mingqiang Bao, Yina Wu, Ji-Young Kim, Augustin Hong, Ajey Jacob, Kosmas Galatsis, Kang L Wang
Fifth International Conference on Information Technology: New Generations …, 2008
Magnetostatic micro-resonators.
Alexander Kozhanov, Zach Griffith, Mark Rodwell, Jim Allen, Dok Won Lee, Shan Wang, Ajey Jacob
APS March Meeting Abstracts, J32. 007, 2008
Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer
Zuoming Zhao, Zhibiao Hao, Kameshwar Yadavalli, Kang L Wang, Ajey P Jacob
Applied Physics Letters 92 (8), 2008
2007
Logic devices with spin wave buses-an approach to scalable magneto-electric circuitry
Alexander Khitun, Mingqiang Bao, Yina Wu, Ji-Young Kim, Augustin Hong, P Jacob Ajey, Kosmas Galatsis, L Wang Kang
MRS Online Proceedings Library 1067, 1-6, 2007
Frequency-dependent magnetization response of CoFe thin film
Mingqiang Bao, Alexander Khitun, Jooyoung Lee, Kang L Wang, Ajey P Jacob
APS March Meeting Abstracts, U14. 003, 2007
2006
Laser microwelding for fiber-chip coupling modules with tapered standard monomode fiber ends for optical communication systems
Ulrich HP Fischer, Oliver Krips, Edmund Mu¨ ller, Alexander Jacob
Optische Modenfeldaption in photonischen Modulen der optischen Aufbau-und …, 2006
Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode‐locking, SOAs and VCSELs
M Laemmlin, G Fiol, M Kuntz, F Hopfer, A Mutig, NN Ledentsov, AR Kovsh, C Schubert, A Jacob, A Umbach, D Bimberg
physica status solidi c 3 (3), 391-394, 2006
2005
10 Gb/s data transmission with a 1.3 μm InGaAs quantum dot laser
Y Chu, RV Penty, IH White, M Kuntz, G Fiol, M Lammlin, D Bimberg, C Schubert, AR Kovsh, A Jacob, A Umbach
2005 31st European Conference on Optical Communication, ECOC 2005 3, 621-622, 2005
10 Gbit/s data modulation using 1.3 µm InGaAs quantum dot lasers
M Kuntz, G Fiol, M Lammlin, C Schubert, AR Kovsh, A Jacob, A Umbach, D Bimberg
Electronics letters 41 (5), 244-245, 2005
We4. P. 060 10Gb/s Data Transmission with a 1.3 mum InGaAs Quantum Dot Laser
Y Chu, RV Penty, IH White, M Kuntz, G Fiol, M Lammlin, D Bimberg, C Schubert, A Kovsh, A Jacob
IEE CONFERENCE PUBLICATION 502 (3), 621, 2005
2004
Structural properties of relaxed Ge buffer layers on Si (0 0 1): effect of layer thickness and low temperature Si initial buffer
T Myrberg, AP Jacob, O Nur, M Friesel, Magnus Willander, CJ Patel, Y Campidelli, C Hernandez, O Kermarrec, D Bensahel
Journal of Materials Science: Materials in Electronics 15, 411-417, 2004
Post-growth process relaxation properties of strainedCd 0.92 Zn 0.08 Te/Cd 0.83 Zn 0.17 Te quantum well heterostructures grown by molecular beam epitaxy
AP Jacob, T Myrberg, O Nur, M Willander, RN Kyutt
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
2003
Nonradiative centers in InAs dots grown on GaAs substrates for 1.3 μm emission
QX Zhao, AP Jacob, Magnus Willander, SM Wang, YQ Wei, F Ferdos, M Sadeghi, A Larsson, JH Yang
Physics Letters A 315 (1-2), 150-155, 2003
Room temperature luminescence from epilayers grown on (001) GaAs
AP Jacob, QX Zhao, Magnus Willander, CS Yang, Wu-Ching Chou
Journal of applied physics 94 (4), 2337-2340, 2003
Structural roughness and interface strain properties in Si/SiO2/Poly-Si1−x Ge x tri-layer system with ultrathin oxide
LL Ye, A Thölén, AP Jacob, T Myrberg, O Nur, Magnus Willander
Journal of Materials Science: Materials in Electronics 14, 247-254, 2003
Erratum:“Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum well structures”[J. Appl. Phys. 90, 2329(2001)]
AP Jacob, QX Zhao, M Willander, T Baron, N Magnea
Journal of Applied Physics 93 (6), 3680-3680, 2003
Ultrathin oxynitridation process through ion implantation in a poly Si1− xGex gate MOS capacitor
AP Jacob, T Myrberg, M Friesel, O Nur, Magnus Willander, U Serincan, RAŞİT Turan
Materials Science in Semiconductor Processing 6 (1-3), 37-41, 2003
2002
Hydrogen passivation of self assembled InAs quantum dots
AP Jacob, QX Zhao, Magnus Willander, F Ferdos, M Sadeghi, SM Wang
Journal of applied physics 92 (11), 6794-6798, 2002
Investigation of Future Nanoscaled Semiconductor Heterostructures and CMOS Devices
Ajey P Jacob
Chalmers University of Technology and Göteborg Universtity, 2002
Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p+ poly-Si1− xGex and poly-Si gate materials
AP Jacob, T Myrberg, O Nur, Magnus Willander, P Lundgren, E Ö Sveinbjörnsson, LL Ye, A Thölen, M Caymax
Semiconductor science and technology 17 (9), 942, 2002
Post-growth structural stability of strained CdZnTe single quantum well grown by MBE
AP Jacob, T Myrberg, O Nur, OX ZHAO, M Willander, T Baron
SPIE proceedings series, 1088-1092, 2002
Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials
AP Jacob, T Myrberg, MYA Yousif, O Nur, M Willander, P Lundgren, EÖ Sveinbjörnson, Matty Caymax
2002
Optical properties of InAs quantum dots
Magnus Willander, QX Zhao, AP Jacob, SM Wang, YQ Wei
Acta Physica Polonica A 102 (4-5), 567-576, 2002
2001
Relaxation and photoluminscence of different post-processed Si/Si1− xGex quantum well structures grown by CVD
T Myrberg, AP Jacob, O Nur, QX Zhao, M Willander, WB DeBoer
Solid-State Electronics 45 (11), 1915-1919, 2001
Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum well structures
AP Jacob, QX Zhao, M Willander, T Baron, N Magnea
Journal of Applied Physics 90 (5), 2329-2332, 2001
1998
DC electrical conductivity of chemical vapour deposited diamond sheets: a correlation with hydrogen content and paramagnetic defects
AK Sikder, AP Jacob, T Sharda, DS Misra, M Pandey, D Kabiraj, DK Avasthi
Thin solid films 332 (1-2), 98-102, 1998
1997
t (3; 21) following peripheral blood stem cell transplantation in chronic phase chronic myeloid leukaemia
A Jacob, M Griffiths, S Larkins, J Holmes
Bone marrow transplantation 19 (12), 1255-1258, 1997